| PART |
Description |
Maker |
| BSM50GD60DLCE3226 |
High Voltage Rectifer Diodes IGBT模块
|
Infineon Technologies AG
|
| BSM75GB160D |
High Voltage Rectifer Diodes 晶体管| IGBT功率模块|半桥| 1.6KV五（巴西）国际消费电子展| 100号A一（c
|
Bourns, Inc.
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SA1831 0165 |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| 2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| CMPTA42E CMPTA92E |
SMD Small Signal Transistor PNP High Voltage
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| 2SC4257 0458 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| IR413 |
High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
